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LX5506E Ver la hoja de datos (PDF) - Microsemi Corporation

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LX5506E
Microsemi
Microsemi Corporation Microsemi
LX5506E Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
INTEGRATED PRODUCTS
LX5506E
InGaP HBT 4 – 6GHz Power Amplifier
PRELIMINARY DATA SHEET
ABSOLUTE MAXIMUM RATINGS
DC Supply Voltage, RF Off...............................................................................6V
Collector Current ........................................................................................500mA
Total Power Dissipation....................................................................................3W
RF Input Power........................................................................................... 10dBm
Operation Ambient Temperature .......................................................-40 to +85°C
Storage Temperature.......................................................................... -60 to 150°C
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal.
PACKAGE PIN OUT
13 14 15 16
12
1
11
2
10
3
9
4
87 65
LQ PACKAGE
(Bottom View)
Name
RF IN
Pin #
2, 3
FUNCTIONAL PIN DESCRIPTION
Description
RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base
of the first stage.
VCC
VB1
VB2
VB3
DET
REF
4
Supply voltage for the bias reference and control circuits. This pin can be combined with VC1, VC2 and
VC3 pins, resulting in a single supply voltage (referred to as Vc).
5
Bias control voltage for the first stage.
6
Bias control voltage for the second stage.
7
Bias control voltage for the third stage.
9
Detector output voltage for the third stage PA output power.
8
Detector output voltage for the reference power detector.
RF OUT 10, 11
RF output for the power amplifier. This pin is AC-coupled and does not require a DC-blocking
capacitor.
VC1
16
DC supply voltage for the first stage amplifier.
VC2
15
DC supply voltage for the second stage amplifier.
VC3
14
DC supply voltage for the third stage amplifier.
GND
Center The center metal base of the MLP package provides both DC/RF ground as well as heat sink for the
Metal power amplifier.
NC
1,12,13
These pins are unused and not connected to the device inside the package. They can be treated either
as open pins, or connected to ground for better heat dissipation.
Copyright 2000
Rev. 1.0, 2003-01-10
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2

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