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LX5506B Ver la hoja de datos (PDF) - Microsemi Corporation

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LX5506B
Microsemi
Microsemi Corporation Microsemi
LX5506B Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
LX5506B
TM
®
InGaP HBT 4 – 6GHz Power Amplifier
PRODUCTION DATA SHEET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, the following specifications apply over the following test conditions: Vc = 3.3V, Vref=2.9V, Icq = 90mA,
and TA = 25°C
PARAMETER
CONDITION SYMBOL
Frequency Range
f
Output Power at 1dB Compression
Pout
Power Gain at Pout=+18dBm
Gp
EVM at Pout=+18dBm
64QAM/54Mbps
Total Current at Pout=+18dBm
Ic_total
Quiescent Current
Icq
Bias Control Reference Current
For Icq=90mA
Iref
Small-Signal Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Over 200MHz
-40 to +85oC
S21
S21
S21
S11
Output Return Loss
S22
Reverse Isolation
S12
Second Harmonic
Pout = +18dBm
Third Harmonic
Pout = +18dBm
Detector Response
Pout = +18dBm
DET
Ramp-On Time
10~90%
tON
Note: All measured data was obtained on a 10 mil GETEK evaluation board.
MIN.
5.15
25
TYP.
26
25
2.5
170
90
4.2
24
+/-0.5
+/-1
-15
-8
-40
-40
-40
1.6
100
MAX.
5.35
MIN.
5.7
25
TYP.
26
21
3
180
90
4.2
20
+/-0.5
+/-0.5
-10
-10
-40
-40
-40
2.2
100
MAX.
5.85
UNIT
GHz
dBm
dB
%
mA
mA
mA
dB
dB
dB
dB
dB
dB
dBc
dBc
V
ns
PACKAGE DIMENSIONS
LQ 16-Pin MLPQ 3x3 (75 x 75 mil DAP)
D
E
A1
A3
b
D2
K
E2
L
e
A
Dim
MILLIMETERS
MIN MAX
INCHES
MIN MAX
A 0.80 1.00 0.031 0.039
A1
0
0.05
0 0.002
A3
0.20 REF
0.008 REF
b 0.18 0.30 0.007 0.012
D
3.00 BSC
0.118 BSC
E
3.00 BSC
0.118 BSC
e
0.50 BSC
0.020 BSC
D2 1.55 1.80 0.061 0.071
E2 1.55 1.80 0.061 0.071
K
0.2
-
0.008
-
L 0.35 0.50 0.012 0.020
Note:
1. Dimensions do not include mold flash or protrusions;
these shall not exceed 0.155mm(.006”) on any side.
Lead dimension shall not include solder coverage.
Copyright © 2003
Rev. 1.0b, 2005-03-02
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3

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