LX5503E Ver la hoja de datos (PDF) - Microsemi Corporation
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LX5503E Datasheet PDF : 9 Pages
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LX5503E
TM
®
InGaP HBT 4 – 6GHz Power Amplifier
PRODUCTION DATA SHEET
CHARACTERISTIC CURVES
Typical EVM Variation Over Temperature
(Vc=3.3V, Icq=100mA at Room Temperature, Pout=18dBm, Freq=5.25GHz)
10
9
-40oC
-25oC
8
0oC
25oC
7
50oC
85oC
6
5
4
3
2
1
0
13
14
15
16
17
18
19
20
21
Pout (dBm)
Typical ACPR Variation Over Temperature
(Vc=3.3V, Icq=100mA at Room Temperature, Pout=18dBm, Freq=5.25GHz)
-40
-40oC
-25oC
0oC
-45
25oC
50oC
85oC
-50
-55
-60
13
14
15
16
17
18
19
20
21
Pout (dBm)
Copyright © 2000
Rev. 1.2d, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 7
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