LX5503E Ver la hoja de datos (PDF) - Microsemi Corporation
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LX5503E Datasheet PDF : 9 Pages
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LX5503E
TM
®
InGaP HBT 4 – 6GHz Power Amplifier
PRODUCTION DATA SHEET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, the following specifications apply over the following test conditions: Vcc = 3.3V, Icq = 100mA,
TA = 25°C
PARAMETER
Frequency Range
Output Power at 1dB Compression
Power Gain at Pout=18dBm
EVM at Pout=18dBm
Total Current at Pout=18dBm
Quiescent Current
Bias Control Reference Current
Small-Signal Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Second Harmonic
Third Harmonic
Ramp-On Time
CONDITION
64QAM/54Mbps
For Icq=100mA
Over 200MHz
-40 to +85oC
Pout = 18dBm
Pout = 18dBm
10~90%
SYMBOL
f
Pout
Gp
Ic_total
Icq
Iref
S21
ΔS21
ΔS21
S11
S22
S12
tON
MIN.
4.9
25
TYP.
26
21
3
150
100
1.5
19
+/-0.5
+/-1
-15
-7
-35
-40
-45
100
MAX.
5.35
-10
MIN.
5.7
25
TYP.
26
16
3
160
100
1.5
15
+/-0.5
+/-1
-12
-8
-35
-35
-45
100
MAX.
5.85
-10
UNIT
GHz
dBm
dB
%
mA
mA
mA
dB
dB
dB
dB
dB
dB
dBc
dBc
ns
Copyright © 2000
Rev. 1.2d, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
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