L6563S Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
L6563S Datasheet PDF : 43 Pages
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L6563S
Table 4. Electrical characteristics (continued)
Symbol
Parameter
Test condition
Triggering voltage
VZCDT (negative-going edge)
IZCDb
IZCDsrc
IZCDsnk
Input bias current
Source current capability
Sink current capability
Tracking boost function
VZCD = 1 to 4.5 V
ΔV Dropout voltage VVFF-VTBO
ITBO
Linear operation
IINV-ITBO current mismatch
IINV-ITBO current mismatch
VTBOclamp Clamp voltage
ITBO_Pull Pull-up current
PWM_STOP
ITBO = 0.2 mA
ITBO = 25 µA to 0.2mA
ITBO = 25 µA to 0.2mA
TJ = 25 °C
(3) VVFF = 4 V
VTBO = 1 V
VFF = VMULT = 0 V
Ileak High level leakage current
VL
Low level
RUN function
VPWM_STOP = Vcc
IPWM_STOP = 0.5 mA
IRUN
VDIS
VEN
Input bias current
Disable threshold
Enable threshold
Start-up timer
VRUN = 0 to 3 V
(3) voltage falling
(3) voltage rising
tSTART_DEL Start-up delay
First cycle after wake-up
tSTART Timer period
Voltage feedforward
VVFF Linear operation range
ΔV
Dropout VMULTpk-VVFF
ΔVVFF Line drop detection threshold
ΔVVFF Line drop detection threshold
RDISCH Internal discharge resistor
Restart after VCS > VCS_th
Vcc < VccOn
Vcc > or = to VccOn
Below peak value
Below peak value
TJ = 25 °C
TJ = 25 °C
Electrical characteristics
Min. Typ. Max. Unit
0.5 0.7 0.9 V
-2.5 -4
2.5 5
1 µA
mA
mA
-20
20 mV
0
0.2 mA
-5.5
+1.0 %
-4.0
+0 %
2.9 3 3.1 V
2 μA
1 µA
1V
-1 µA
0.745 0.8 0.855 V
0.845 0.88 0.915 V
25 50 75 µs
75 150 300
µs
150 300 600
0.8
3V
800
mV
20
40 70 100 mV
50 70 90 mV
7.5 10 12.5
kΩ
5
20
Doc ID 16116 Rev 4
13/43
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