KSH13009 Ver la hoja de datos (PDF) - Shantou Huashan Electronic Devices
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KSH13009 Datasheet PDF : 1 Pages
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON T RANSISTOR
KSH13009
█ ＨＩＧＨ ＶＯＬＴＡＧＥ ＳＷＩＴＣＨ ＭＯＤＥ ＡＰＰＬＩＣＩＣＡＴＩＯＮＳ
High Speed Switching
Suitable for Switching Regulator and Montor Control
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… －５5~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation（Tc=25℃）…………………… 100W
VCBO——Collector-Base Voltage…………………………… 700V
VCEO——Collector-Emitter Voltage………………………… 400V
VEBO ——Emitter-Base Voltage……………………………… 9V
IC——Collector Current（DC）……………………………… 12A
IB——Base Current……………………………………………6A
TO-220
1―Base，B
2―Collector，C
3―Emitter, E
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
BVCEO
IEBO
Collector-Emitter Breakdown Voltage
Emitter-Base Cut-off Current
HFE（1） DC Current Gain
HFE（2）
VCE(sat)1 Collector- Emitter Saturation Voltage
VCE(sat)2
VCE(sat)3
VBE(sat)1 Base-Emitter Saturation Voltage
VBE(sat)2
Cob
fT
tON
tSTG
Output Capacitance
Current Gain-Bandwidth Product
Turn On Time
Storage Time
tF
Fall Time
Min
４００
８
６
４
Typ
１８０
Max Unit
Test Conditions
Ｖ IC=10mA, IB=0
１ ｍＡ VEB=9V, IC=0
４０ VCE=5V, IC=5A
３０ VCE=5V, IC=8A
１ Ｖ IC=5A, IB=1A
１．５ Ｖ IC=8A, IB=1.6A
３ Ｖ IC=12A, IB=3A
１．２ Ｖ IC=5A, IB=1A
１．６ Ｖ IC=8A, IB=1.6A
１．１
３
０．７
ｐＦ VCB=10V,f=0.1MHz
ＭＨｚ VCE=10V,IC=0.5A
μs
μs VCC=125V, IC=8A,
μs IB1=1.6A,IB2=-1.6A
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