SEMICONDUCTOR
TECHNICAL DATA
KRA351~357
EPITAXIAL PLANAR PNP TRANSISTOR
HIGH CURRENT SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
·With Built-in Bias Resistors.
·Simplify Circuit Design.
·Reduce a Quantity of Parts and Manufacturing Process.
·High Output Current :-500mA.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON(+)
BIAS RESISTOR VALUES
TYPE NO. R1(kΩ) R2(kΩ)
KRA351
1
1
KRA352
2.2
2.2
KRA353
4.7
4.7
KRA354
10
10
KRA355
0.47
10
KRA356
1
10
KRA357
2.2
10
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2
B
1.25+_ 0.15
1
3
C
0.90+_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
P
H 0.15+0.1/-0.06
J
1.30
K
0.00~0.10
L
H
M
0.70
0.42 +_0.10
N
K
N
N
Min 0.10
P
Max 0.1
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
USM
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Output Voltage
KRA351~357
KRA351
KRA352
KRA353
Input Voltage
KRA354
KRA355
KRA356
KRA357
Output Current
Power Dissipation
Junction Temperature
KRA351~357
Storage Temperature Range
SYMBOL
VO
VI
IO
PD
Tj
Tstg
RATING
-12
-10, 10
-12, 10
-20, 10
-30, 10
-10, 5
-10, 5
-12, 6
-500
100
150
-55~150
UNIT
V
V
mA
mW
℃
℃
MARK SPEC
TYPE KRA351 KRA352 KRA353 KRA354 KRA355 KRA356 KRA357
MARK AA
AB
AC
AD
AE
AF
AG
Marking
Type Name
Lot No.
2008. 10. 30
Revision No : 2
1/2