KDZ100VW(2008) Ver la hoja de datos (PDF) - KEC
Número de pieza
componentes Descripción
Fabricante
KDZ100VW Datasheet PDF : 2 Pages
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SEMICONDUCTOR
TECHNICAL DATA
EL Driver System Application.
FEATURES
·Small Package : USC
·Sharp breakdown characteristic.
·Normal Voltage Tolerance About ±5.0%
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL RATING
Power Dissipation
PD *
200
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55～150
Operating Temperature
Topr
-55～150
* Mounted on a glass epoxy circuit board of 20×20㎜,
pad dimension of 4×4㎜.
UNIT
mW
℃
℃
℃
KDZ100VW
Bi-DIRECTIONAL ZENER DIODE
SILICON EPITAXIAL PLANAR DIODE
B
G
1
H
2
D
J
C
I
M
M
1. CATHODE
2. CATHODE
DIM MILLIMETERS
A
2.50+_ 0.1
B
1.25+_ 0.05
C
0.90 +_ 0.05
D 0.30+0.06/-0.04
E
1.70 +_0.05
F
MIN 0.17
G
0.126+_ 0.03
H
0~0.1
I
1.0 MAX
J
0.15+_ 0.05
K
0.4+_ 0.05
L
2 +4/-2
M
4~6
USC
Marking
2
AW
Type Name
Lot No.
1
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Zener Voltage
Dynamic Impedan
(Note1)
(Note2)
VZ
IZ=1mA
ZZ
IZ=1mA
Reverse Current
IR
VR=76V
(Note 1) VZ is tested with pulsed (40ms)
(Note 2) VZ is measured at IZ by given a very small A.C current signal.
2
1
MIN.
95. 0
-
-
TYP.
-
-
-
MAX.
105. 0
700
0.2
UNIT
V
Ω
μA
2008. 9.11
Revision No : 1
1/2
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