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KB2512 Ver la hoja de datos (PDF) - Samsung

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KB2512 Datasheet PDF : 36 Pages
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KB2512
DEFLECTION PROCESSOR FOR MULTISYNC MONITORS
B+ SECTION
OPERATING CONDITIONS
Parameter
Minimum feedback resistor
Table 12. B+ Section Operating Conditions
Symbol
Conditions
Min
FeedRes Resistor between pins 15 and 14 5
Typ Max Unit
K
ELECTRICAL CHARACTERISTICS
(VCC = 12V, Tamb = 25 °C)
Table 13. B+ Section Electrical Characteristics
Parameter
Symbol
Conditions
Min Typ Max Unit
Error amplifier open loop gain
OLG At low frequency (see 10)
85
dB
Sunk current on error amplifier output
when BOUT is in safety condition
Icomp Pin 14 (see 12)
0.5
mA
Unity gain band width
UGBW (see 7)
6
MHz
Regulation input bias current
IRI
Current sourced by pin 15
0.2
µA
(PNP base)
Maximum guaranteed error amplifier
output current
EAOI
Current sourced by pin 14
Current sunk by pin 14
0.5 mA
2 mA
Current sense input voltage gain
CSG Pin 16
3
Max current sense input threshold
voltage
MCEth Pin 16
1.2
V
Current sense input bias current
ISI
Current sourced by pin 16
1
µA
(PNP base)
Maximum external power transistor on
time
Tonmax % of H-period
@ fo = 27kHz (see 6)
100
%
B+ output saturation voltage
B+OSV V28 with I28 = 10mA
0.25
V
Internal reference voltage
IVREF On error amp positive input
4.8
V
for subaddress 0B
Byte 1000000
Internal reference voltage adjustment
range
VREFADJ Byte 111111
Byte 000000
+20
%
-20
%
Falling time
tFB+
Pin 28
100
ns
15

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