IXGP30N120B3 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGP30N120B3 Datasheet PDF : 6 Pages
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Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
IC = 30A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
IC = 30A, VGE = 15V, VCE = 0.5 • VCES
Inductive load, TJ = 25°C
IC = 30A, VGE = 15V
VCE = 0.8 • VCES, RG = 5Ω
Notes 2
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCS
RthCS
Inductive load, TJ = 125°C
IC = 30A,VGE = 15V
VCE = 0.8 • VCES,RG = 5Ω
Notes 2
TO-220
TO-247
IXGA30N120B3 IXGP30N120B3
IXGH30N120B3
Characteristic Values
Min. Typ. Max.
TO-220 (IXGP) Outline
11
19
S
1750
pF
120
pF
46
pF
87
15
39
16
37
3.47
127
204
2.16
nC
nC
nC
ns
ns
mJ
200 ns
380 ns
4.0 mJ
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
18
ns
38
ns
6.70
mJ
216
ns
255
ns
5.10
mJ
0.42 °C/W
0.50
°C/W
0.21
°C/W
TO-247 (IXGH) AD Outline
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
TO-263 (IXGA) Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.06
0.51
1.14
4.83
0.99
1.40
0.40 0.74
1.14 1.40
8.64
8.00
9.65
8.89
9.65 10.41
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
Inches
Min. Max.
.160 .190
.020 .039
.045 .055
.016 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .005
1 = Gate
2 = Collector
3 = Emitter
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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