IXGH24N60A Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGH24N60A Datasheet PDF : 6 Pages
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IXGH24N60AU1 IXGH24N60AU1S
Fig.7 Turn-Off Energy per Pulse and
Fall Time on Collector Current
500
400
TJ = 125°C
RG = 10Ω
5
Eoff
4
300
3
tfi
200
2
Fig.8 Dependence of Turn-Off Energy
Per Pulse and Fall Time on R
G
500
5
TJ = 125°C
IC = 24A
400
4
Eoff
300
3
tfi
200
2
100
1
100
1
0
0
0
10
20
30
40
50
IC - Amperes
0
0
0 20 40 60 80 100 120
RG - Ohms
Fig.9 Gate Charge Characteristic Curve
15
IC = 24A
VCE = 300V
12
9
6
3
Fig.10 Turn-Off Safe Operating Area
100
10
TJ = 125°C
RG = 10Ω
dV/dt < 3V/ns
1
0.1
0
0
25
50
75
100
0.01
0
100 200 300 400 500 600
Qg - nanocoulombs
G24N60P2.JNB
VCE - Volts
Fig.11 Transient Thermal Impedance
1
D=0.5
D=0.2
D=0.1
0.1 D=0.05
D=0.02
D=0.01
Single Pulse
D = Duty Cycle
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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