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IXGH24N60A Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza
componentes Descripción
Fabricante
IXGH24N60A
IXYS
IXYS CORPORATION IXYS
IXGH24N60A Datasheet PDF : 6 Pages
1 2 3 4 5 6
IXGH24N60AU1 IXGH24N60AU1S
Symbol
gfs
Cies
Coes
C
res
Qg
Qge
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
E
on
t
d(off)
tfi
Eoff
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
9 13
S
Pulse test, t 300 µs, duty cycle 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
1500
pF
175
pF
40
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
I
C
=
I,
C90
V
GE
=
15
V,
L
=
100
µH,
VCE = 0.8 VCES, RG = Roff = 10
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°C
I
C
=
I,
C90
V
GE
=
15
V,
L
=
100
µH
VCE = 0.8 VCES, RG = Roff = 10
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
90 120 nC
11 15 nC
30 40 nC
25
ns
15
ns
0.6
mJ
150 200 ns
110 270 ns
1.5
mJ
25
ns
15
ns
0.8
mJ
250
ns
400
ns
2.3
mJ
0.83 K/W
0.25
K/W
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A
4.7
A
2.2
1
A
2.2
2
b
1.0
b 1.65
1
b2 2.87
C
.4
D 20.80
E 15.75
e 5.20
L 19.81
L1
P 3.55
Q 5.89
5.3
2.54
2.6
1.4
2.13
3.12
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-247 SMD Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
I = I , V = 0 V,
F
F C90 GE
Pulse test, t 300 µs, duty cycle d 2 %
1.6 V
IRM
trr
R
thJC
IF = IC90, VGE = 0 V, -diF/dt = 240 A/µs
10
VR = 360 V
TJ = 125°C 150
IF = 1 A; -di/dt = 100 A/µs; VR = 30 VTJ = 25°C 35
15 A
ns
50 ns
1 K/W
1. Gate
2. Collector
3. Emitter
4. Collector
Min. Recommended Footprint (Dimensions in inches and (mm))
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
Dim.
A
A1
A2
b
b1
C
D
E
e
L
L1
L2
L3
L4
ØP
Q
R
S
Millimeter
Min. Max.
4.83
2.29
1.91
5.21
2.54
2.16
1.14
1.91
1.40
2.13
0.61 0.80
20.80 21.34
15.75 16.13
5.45 BSC
4.90
2.70
2.10
0.00
1.90
5.10
2.90
2.30
0.10
2.10
3.55
5.59
3.65
6.20
4.32
6.15
4.83
BSC
Inches
Min. Max.
.190
.090
.075
.205
.100
.085
.045 .055
.075 .084
.024 .031
.819 .840
.620 .635
.215 BSC
.193
.106
.083
.00
.075
.201
.114
.091
.004
.083
.140 .144
.220 .244
.170 .190
.242 BSC
5,017,508 5,049,961 5,187,117 5,486,715
5,034,796 5,063,307 5,237,481 5,381,025

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