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IXGH40N60B2 Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza
componentes Descripción
Fabricante
IXGH40N60B2
IXYS
IXYS CORPORATION IXYS
IXGH40N60B2 Datasheet PDF : 5 Pages
1 2 3 4 5
IXGH 40N60B2
IXGT 40N60B2
Fig. 7. Transconductance
60
50 TJ = -40ºC
25ºC
125ºC
40
30
20
10
0
0
30
60
90
120
150
180
I C - Amperes
Fig. 8. Dependence of Turn-Off
Energy on RG
3
2.7
2.4
2.1
TJ = 125ºC
VGE = 15V
1.8
VCE = 400V
1.5
1.2
IC = 60A
IC = 30A
0.9
0.6
IC = 15A
0.3
3 6 9 12 15 18 21 24 27 30
R G - Ohms
Fig. 9. Dependence of Turn-Off
Energy on Ic
2.7
2.4
RG = 3.3
VGE = 15V
2.1
VCE = 400V
1.8
1.5
1.2
TJ = 125ºC
0.9
Fig. 10. Dependence of Turn-Off
Energy on Tem perature
2.7
2.4
RG = 3.3
VGE = 15V
2.1
VCE = 400V
IC = 60A
1.8
1.5
1.2
IC = 30A
0.9
0.6
0.3
TJ = 25ºC
0
15 20 25 30 35 40 45 50 55 60
I C - Amperes
0.6
0.3
IC = 15A
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 11. Dependence of Turn-Off
Sw itching Tim e on RG
600
550
td(off)
tfi - - - - - -
500
TJ = 125ºC
450
VGE = 15V
VCE = 400V
400
350
300
IC = 15A
250
200
IC = 60A
IC = 30A
150
Fig. 12. Dependence of Turn-Off
Sw itching Tim e on Ic
300
275
td(off)
tfi - - - - - -
250
225
RG = 3.3
VGE = 15V
VCE = 400V
200
TJ = 125ºC
175
150
125
100
TJ = 25ºC
100
3 6 9 12 15 18 21 24 27 30
R G - Ohms
IXYS reserves the right to change limits, test conditions, and dimensions.
75
15 20 25 30 35 40 45 50 55 60
I C - Amperes
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

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