IXFR102N30P Ver la hoja de datos (PDF) - IXYS CORPORATION
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IXFR102N30P Datasheet PDF : 5 Pages
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PolarHTTM HiPerFET IXFR 102N30P
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
V = 300 V
DSS
ID25 = 60 A
≤ RDS(on) 36 m Ω
trr
≤ 200 ns
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGS
VGSM
ID25
I
DM
IAR
EAR
EAS
dv/dt
P
D
TJ
TJM
T
stg
T
L
V
ISOL
FC
Weight
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
Continuous
Transient
TC = 25° C
T
C
=
25°
C,
pulse
width
limited
by
T
JM
TC = 25° C
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS,
TJ ≤150° C, RG = 4 Ω
T
C
= 25° C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
Mounting force
300
V
300
V
±20
V
±30
V
60
A
250
A
60
A
60
mJ
2.5
J
10
V/ns
250
-55 ... +150
150
-55 ... +150
300
2500
22..130/5..29
5
W
°C
°C
°C
°C
V~
N/lb
g
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
300
V
VGS(th)
VDS = VGS, ID = 4 mA
2.5
5.0 V
IGSS
VGS = ±20 VDC, VDS = 0
±200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 51 A
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
36 m Ω
ISOPLUS247 (IXFR)
E153432
G
DS
(Isolated Tab)
G = Gate
S = Source
D = Drain
Features
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l International standard packages
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99247E(12/05)
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