DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TDA8808T Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza
componentes Descripción
Fabricante
TDA8808T Datasheet PDF : 22 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
Philips Semiconductors
Photo diode signal processor for compact
disc players
Product specification
TDA8808T
TDA8808AT
SYMBOL
PARAMETER
CONDITIONS MIN.
TYP.
MAX.
τLO
For AC (note 12) delay time
* Value to be fixed.
** X = don’t care.
*
Notes to the characteristics
1. Voltage output signal VO1 measured at fHFin = 700 kHz; IHFin(p-p) = 7 µA; VGCHF = 2,4 V.
Voltage output signal VO2 measured at fHFin = 100 kHz; IHFin(p-p) = 7 µA; VGCHF = 2,4 V.
2. Voltage output signal VO1 measured at fHFin = 1 MHz; IHFin(p-p) = 7 µA; VGCHF = 2,4 V.
Voltage output signal VO2 measured at fHFin = 100 kHz; IHFin(p-p) = 7 µA; VGCHF = 2,4 V.
3. Phase of input/output signal, group delay and flatness measured at IHFin(p-p) = 1 µA; VGCHF = 4 V.
Group delay τ = d-d---w-φ-- ; f 50 kHz.
Flatness: ∆τ = τmax − τmin.
4. HF part output voltage for closed loop conditions; fHFin = 500 kHz.
5. HF part output voltage for closed loop conditions; fHFin = 0,1 to 1 MHz.
M1 is the measured value of VO1.
6. P1 is the measured value of I--D----1----(--1---I-)-R---+-e--1--I--D(---1-2---)-(--1----)-- --I--D---1----(-I--2R----)e---1-+--(---I2--D--)-2----(---2---)--
Where:
(1) are the current levels at fi = 25 kHz.
(2) are the current levels at fi = 1 kHz.
Measurement taken at VGCLF = 3,5 V.
7. P2 is the measured value of I--D----3----(--1---I-)-R---+-e--2--I--D(---1-4---)-(--1----)-- --I--D---3----(-I--2R----)e---2-+--(---I2--D--)-4----(---2---)--
Where:
(1) are the current levels at fi = 25 kHz.
(2) are the current levels at fi = 1 kHz.
Measurement taken at VGCLF = 3,5 V.
8. S6 is the measured value of S1 -I-D-4---T- 1, 1 IBgc
Measurement taken at VGCLF = 3,5 V.
9. LF part reference current Iret and low-pass filter output voltage for closed loop conditions.
Measurement taken at IDT > IDT3; VDET < VDETn2 or VDET > VDETp2.
10. FE output current measured at VGCLF = 3, 5 V and Si RD = HIGH Z; IST = V--R---F-F--O-O---CC-----SS---TT---AA---RR---T-T-
UNIT
ns
11. Laser supply transconductance for DC
GLDC = ----V-I--L-L--O-M-- ( 0 < ILO < 2 mA)
November 1987
14

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]