IS61C6416AL Ver la hoja de datos (PDF) - Integrated Silicon Solution

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Fabricante

IS61C6416AL

64K x 16 HIGH-SPEED CMOS STATIC RAM

Integrated Silicon Solution 

IS61C6416AL IS64C6416AL

IS62C6416AL IS65C6416AL

DATA RETENTION SWITCHING CHARACTERISTICS

Symbol

VDR

IDR

Parameter

VDD for Data Retention

Data Retention Current

Test Condition

See Data Retention Waveform

VDD = 2.0V, CE ≥ VDD – 0.2V

VIN ≥ VDD – 0.2V, or VIN ≤ VSS + 0.2V

tSDR DataRetentionSetupTime SeeDataRetentionWaveform

tRDR RecoveryTime

See Data Retention Waveform

Note:

1. Typical Values are measured at VDD = 5V, TA = 25oC and not 100% tested.

Com.

Ind.

Auto.

typ. (1)

DATA RETENTION WAVEFORM (CE Controlled)

VDD

4.5V

tSDR

Data Retention Mode

2.2V

VDR

CE

GND

CE ≥ VDD - 0.2V

ISSI ®

Min.

2.0

—

—

—

50

0

tRC

Max. Unit

5.5 V

90 µA

100

125

— ns

— ns

tRDR

12

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. A

01/17/05

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