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IS41LV16257C-35KLI Datasheet PDF : 20 Pages
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IS41C16257C
IS41LV16257C
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameters
Rating
Unit
Vt
Voltage on Any Pin Relative to GND 5V –1.0 to +7.0
V
3.3V –0.5 to +4.6
V
Vdd
Supply Voltage
5V –1.0 to +7.0
V
3.3V –0.5 to +4.6
V
Iout
Output Current
50
mA
Pd
Power Dissipation
1
W
Ta
Operation Temperature
Com.
0 to +70
°C
Ind. -40 to +85
Tstg
Storage Temperature
–55 to +125
°C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND)
Symbol Parameter
Vdd
Supply Voltage
Vih
Input High Voltage
Vil
Input Low Voltage
Iil
Input Leakage Current
Iio
Output Leakage Current
Voh
Output High Voltage Level
Vol
Output Low Voltage Level
Ta
Ambient Temperature
Test Condition
Voltage Min. Typ. Max. Unit
5V
4.5 5.0
5.5
V
3.3V 3.0 3.3
3.6
V
5V
3.3V
2.0 — Vdd + 1.0 V
2.0 — Vdd + 0.3 V
5V/3.3V –0.3 —
0.8
V
Any input 0V < Vin < Vdd
–5
Other inputs not under test = 0V
5
µA
Output is disabled (Hi-Z)
–5
0V < Vout < Vdd
5
µA
Ioh = –5.0 mA
Ioh = –2.0 mA
5V
2.4
3.3V 2.4
—
V
—
Iol = +4.2 mA
Iol = +2 mA
5V
—
3.3V —
0.4
V
0.4
Com.
0
—
Ind. -40 —
+70 °C
+85
CAPACITANCE(1,2)
Symbol Parameter
Max.
Unit
Cin1
Input Capacitance: A0-A8
Cin2
Input Capacitance: RAS, UCAS, LCAS, WE, OE
5
pF
7
pF
Cio
Data Input/Output Capacitance: I/O0-I/O15
7
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: Ta = 25°C, f = 1 MHz, Vdd=3.3V ± 10%.
6
Integrated Silicon Solution, Inc.
Rev. 00A
04/09/2010
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