IS41C16256C(2013) Ver la hoja de datos (PDF) - Integrated Silicon Solution
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IS41C16256C Datasheet PDF : 21 Pages
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IS41C16256C
IS41LV16256C
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameters Rating Unit
Vt
Voltage on Any Pin Relative to GND
5V -1.0 to +7.0 V
3.3V -0.5 to +4.6 V
Vdd
Supply Voltage
5V -1.0 to +7.0 V
3.3V -0.5 to +4.6 V
Iout
Output Current
50
mA
Pd
Power Dissipation
1
W
Ta
Operation Temperature
-40 to +85 °C
Tstg
Storage Temperature
–55 to +125 °C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol Parameter
Test Conditions Min. Typ. Max. Unit
Vdd Supply Voltage
5V
3.3V
4.5 5.0
3.0 3.3
5.5 V
3.6 V
Vih
Input High Voltage
5V 2.4 — Vdd + 1.0 V
3.3V 2.0 — Vdd + 0.3 V
Vil
Input Low Voltage
5V –1.0 —
3.3V –0.3 —
0.8 V
0.8 V
Iil
Input Leakage Current
Any input 0V ≤ Vin ≤ Vdd
Other inputs not under test = 0V
-5
5 µA
Iio
Output Leakage Current
Output is disabled (Hi-Z)
0V ≤ Vout ≤ Vdd
-5
5 µA
Voh Output High Voltage Level Ioh = –5.0 mA
Ioh = –2.0 mA
5V 2.4
3.3V 2.4
—V
—
Vol Output Low Voltage Level
Iol = +4.2 mA
Iol = +2.0 mA
5V —
3.3V —
0.4 V
0.4
CAPACITANCE(1,2)
Symbol Parameter
Max.
Cin1
Input Capacitance: A0-A8
5
Cin2
Input Capacitance: RAS, UCAS, LCAS, WE, OE
7
Cio
Data Input/Output Capacitance: I/O0-I/O15
7
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: Ta = 25°C, f = 1 MHz,
Unit
pF
pF
pF
6
Integrated Silicon Solution, Inc.
Rev. A
1/31/2013
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