TECHNOLOGY, INC.
4 MEG x 4
EDO DRAM
EARLY WRITE CYCLE
tRC
tRAS
tRP
RAS#
V IH
V IL
tCSH
tRSH
tCRP
tRCD
tCAS
CAS# VVIIHL
,,, ,,,, ,,,,, ADDR
V IH
V IL
,,,,,,,,, ,,,,,,,,, WE# VVIIHL
,,,,,,,,, , , , , , , DQ
V
V
IOH
IOL
, , , ,,,,,,,,,,,,,,,, OE# VVIIHL
tASR
tRAD
tRAH
ROW
tAR
tASC
tCAH
tACH
tWCS
COLUMN
tCWL
tRWL
tWCR
tWCH
tWP
tDS
tDH
VALID DATA
ROW
DON’T CARE
UNDEFINED
TIMING PARAMETERS
SYMBOL
tACH
tAR
tASC
tASR
tCAH
tCAS
tCRP
tCSH
tCWL
tDH
tDS
tRAD
-5
MIN
MAX
12
38
0
0
8
8
10,000
5
38
8
8
0
9
-6
MIN
MAX
15
45
0
0
10
10
10,000
5
45
10
10
0
12
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYMBOL
tRAH
tRAS
tRC
tRCD
tRP
tRSH
tRWL
tWCH
tWCR
tWCS
tWP
-5
MIN
MAX
9
50
10,000
84
11
30
13
13
8
38
0
5
-6
MIN
MAX
10
60
10,000
104
14
40
15
15
10
45
0
5
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4 Meg x 4 EDO DRAM
D47.pm5 – Rev. 3/97
12
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1997, Micron Technology, Inc.