IRFH4253DPBF Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Fabricante

IRFH4253DPBF

HEXFET® Power MOSFET

International Rectifier 

Avalanche Characteristics

Parameter

EAS

Single Pulse Avalanche Energy 

IAR

Avalanche Current 

Diode Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

IRFH4253DPbF

Typ.

–––

–––

Q1 Max.

61

30

Q2 Max.

568

60

Units

mJ

A

Min. Typ. Max. Units

Conditions

Q1 ––– ––– 45 A MOSFET symbol

Q2 ––– ––– 45

showing the

Q1 ––– ––– 120 A integral reverse

Q2 ––– ––– 580

p-n junction diode.

Q1 ––– ––– 1.0 V TJ = 25°C, IS = 30A, VGS = 0V

Q2 ––– ––– 0.75

TJ = 25°C, IS = 30A, VGS = 0V

Q1 ––– 16 ––– ns Q1 TJ = 25°C, IF = 30A

Q2 ––– 29 –––

VDD = 13V, di/dt = 235A/µs 

Q1 ––– 13 ––– nC Q2 TJ = 25°C, IF = 30A

Q2 ––– 41 –––

VDD = 13V, di/dt = 250A/µs 

3 www.irf.com © 2013 International Rectifier

June 10, 2013

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