IRF3704ZS Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Fabricante

IRF3704ZS

Power MOSFET

International Rectifier 

IRF3704Z/S/L

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)/∆TJ

IDSS

IGSS

gfs

Qg

Qgs1

Qgs2

Qgd

Qgodr

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

20

–––

–––

–––

1.65

–––

–––

–––

–––

–––

48

–––

–––

–––

–––

–––

–––

0.014

6.5

9.1

2.1

-5.6

–––

–––

–––

–––

–––

8.7

2.9

1.1

2.3

2.4

–––

–––

7.9

11.1

2.55

–––

V VGS = 0V, ID = 250µA

e V/°C Reference to 25°C, ID = 1mA

mΩ VGS = 10V, ID = 21A

e VGS = 4.5V, ID = 17A

V VDS = VGS, ID = 250µA

mV/°C

1.0

150

100

-100

–––

13

µA VDS = 16V, VGS = 0V

VDS = 16V, VGS = 0V, TJ = 125°C

nA VGS = 20V

VGS = -20V

S VDS = 10V, ID = 17A

–––

VDS = 10V

––– nC VGS = 4.5V

–––

ID = 17A

–––

See Fig. 16

Qsw

Switch Charge (Qgs2 + Qgd)

––– 3.4 –––

Qoss

Output Charge

td(on)

Turn-On Delay Time

–––

–––

5.6

8.9

–––

–––

e nC VDS = 10V, VGS = 0V

VDD = 10V, VGS = 4.5V

tr

Rise Time

––– 38 –––

ID = 17A

td(off)

Turn-Off Delay Time

––– 11 ––– ns Clamped Inductive Load

tf

Fall Time

––– 4.2 –––

Ciss

Input Capacitance

––– 1220 –––

VGS = 0V

Coss

Output Capacitance

––– 390 ––– pF VDS = 10V

Crss

Reverse Transfer Capacitance

––– 190 –––

ƒ = 1.0MHz

Avalanche Characteristics

EAS

IAR

EAR

d Parameter

Single Pulse Avalanche Energy

Ù Avalanche Current

™ Repetitive Avalanche Energy

Typ.

–––

–––

–––

Max.

36

17

5.7

Units

mJ

A

mJ

Diode Characteristics

Parameter

IS

Continuous Source Current

h Min. Typ. Max. Units

Conditions

––– ––– 67

MOSFET symbol

D

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

A showing the

––– ––– 260

integral reverse

G

––– ––– 1.0

e p-n junction diode.

S

V TJ = 25°C, IS = 17A, VGS = 0V

––– 11

––– 2.3

17

3.5

e ns TJ = 25°C, IF = 17A, VDD = 10V

nC di/dt = 100A/µs

2

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