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Q67100-Q2100 Ver la hoja de datos (PDF) - Siemens AG

Número de pieza
componentes Descripción
Fabricante
Q67100-Q2100
Siemens
Siemens AG Siemens
Q67100-Q2100 Datasheet PDF : 22 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
HYB 514175BJ-50/-55/-60
256k × 16 EDO-DRAM
Absolute Maximum Ratings
Operating temperature range ....................................................................................... 0 to + 70 °C
Storage temperature range.................................................................................... – 55 to + 150 °C
Input/output voltage ....................................................................................................... – 1 to + 6 V
Power supply voltage..................................................................................................... – 1 to + 6 V
Data out current (short circuit) ............................................................................................... 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings†may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
DC Characteristics
TA = 0 to 70 °C; VSS = 0 V; VCC = 5 V ± 10 %, tT = 2 ns
Parameter
Symbol
Limit Values
min.
max.
Unit Test
Condition
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (IOUT = – 5.0 mA)
VOH
Output low voltage (IOUT = 4.2 mA)
VOL
Input leakage current, any input
II(L)
(0 V < VIN < 7 V, all other inputs = 0 V)
Output leakage current
IO(L)
(DO is disabled, 0 V < VOUT < VCC)
Average VCC supply current
ICC1
-50 version
-55 version
-60 version
2.4
– 1.0
2.4
–
– 10
– 10
–
VCC + 0.5 V 1
0.8
V
1
–
V
1
0.4
V
1
10
µA 1
10
µA 1
200
mA 2, 3, 4
190
170
Standby VCC supply current
(RAS = LCAS = UCAS = WE = VIH)
ICC2
–
Average VCC supply current during
RAS-only refresh cycles
ICC3
–
-50 version
-55 version
-60 version
2
mA
200
mA 2, 4
190
170
Average VCC supply current during
hyper page mode (EDO) operation
ICC4
–
-50 version
-55 version
-60 version
2, 3, 4
190
mA
180
170
Semiconductor Group
5
1998-10-01

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