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HSP061-4NY8 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
HSP061-4NY8
ST-Microelectronics
STMicroelectronics ST-Microelectronics
HSP061-4NY8 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
HSP061-4NY8
4-line ESD protection for high speed lines
µQFN-8L package
Figure 1. Functional schematic (top view)
I/O 1 1
I/O 2 2
GND 3
I/O 3 4
I/O 4 5
Internally
8 not connected
7 GND
6
Internally
not connected
Features
Flow-through routing to keep signal integrity
Ultralarge bandwidth: 6 GHz
Ultralow capacitance: 0.6 pF
Low time domain reflection
Low leakage current: 100 nA at 25 °C
Extended operating junction temperature
range: -40 °C to 150 °C
Package size in mm: 2 x 1 x 0.5
RoHS compliant
Datasheet production data
Benefits
High ESD robustness of the equipment
Suitable for high density boards
Complies with following standards
MIL-STD 883G Method 3015-7 Class 3B:
– 8 kV
IEC 61000-4-2 level 4:
– 8 kV (contact discharge)
– 15 kV (air discharge)
Applications
The HSP061-4NY8 is designed to protect against
electrostatic discharge on sub micron technology
circuits driving:
HDMI 1.3 and 1.4
Digital Video Interface
Display Port
USB 3.0
Serial ATA
Description
The HSP061-4NY8 is a 4-channel ESD array with
a rail to rail architecture designed specifically for
the protection of high speed differential lines.
The ultra-low variation of the capacitance ensures
very low influence on signal-skew. The large
bandwidth and the low reflection make it
compatible with 5 Gbps.
The device is packaged in µQFN-8L with a
400 µm pitch, which minimizes the PCB area.
March 2013
This is information on a product in full production.
Doc ID 17414 Rev 5
1/9
www.st.com
9

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