HN1B01F Ver la hoja de datos (PDF) - Toshiba
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HN1B01F Datasheet PDF : 6 Pages
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HN1B01FU
Q1,Q2 Common Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector power dissipation
PC*
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
IEBO
hFE (Note)
VCE (sat)
fT
Cob
Test
Circuit
Test Condition
― VCB = −50V, IE = 0
― VEB = −5V, IC = 0
― VCE = −6V, IC = −2mA
― IC = −100mA, IB = −10mA
― VCE = −10V, IC = −1mA
―
VCB = −10V, IE = 0,
f = 1MHz
Min Typ. Max Unit
―
― −0.1 μA
―
― −0.1 μA
120
―
400
― −0.1 −0.3 V
―
120
― MHz
―
4
―
pF
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Collector cut-off current
ICBO
― VCB = 60V, IE = 0
Emitter cut-off current
IEBO
― VEB = 5V, IC = 0
DC current gain
hFE (Note)
― VCE = 6V, IC = 2mA
Collector-emitter
saturation voltage
VCE (sat)
― IC = 100mA, IB = 10mA
Transition frequency
fT
― VCE = 10V, IC = 1mA
Collector output capacitance
Cob
―
VCB = 10V, IE = 0,
f = 1MHz
Note: hFE Classification Y (Y): 120~240, GR (G): 200~400
( ) Marking Symbol
Min Typ. Max Unit
―
―
0.1 μA
―
―
0.1 μA
120
―
400
―
0.1 0.25 V
―
150
― MHz
―
2
―
pF
3
2007-11-01
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