DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

HEF4516BT,652 Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza
componentes Descripción
Fabricante
HEF4516BT,652
NXP
NXP Semiconductors. NXP
HEF4516BT,652 Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NXP Semiconductors
HEF4516B
Binary up/down counter
Table 7. Dynamic characteristics …continued
VSS = 0 V; Tamb = 25 °C; for test circuit see Figure 8; unless otherwise specified.
Symbol Parameter
Conditions
VDD
Extrapolation formula
tt
transition time
5 V [1] 10 ns + (1.00 ns/pF)CL
10 V
9 ns + (0.42 ns/pF)CL
15 V
6 ns + (0.28 ns/pF)CL
fmax
maximum frequency see Figure 6
5V
10 V
15 V
tW
pulse width
CP input LOW;
minimum width;
see Figure 6
5V
10 V
15 V
PL input HIGH;
minimum width;
see Figure 7
5V
10 V
15 V
MR input HIGH;
minimum width;
see Figure 7
5V
10 V
15 V
trec
recovery time
MR input;
see Figure 7
5V
10 V
15 V
PL input;
see Figure 7
5V
10 V
15 V
tsu
set-up time
Dn to PL;
see Figure 7
5V
10 V
15 V
UP/DN to CP;
see Figure 6
5V
10 V
15 V
CE to CP;
see Figure 6
5V
10 V
15 V
th
hold time
Dn to PL;
see Figure 7
5V
10 V
15 V
UP/DN to CP;
see Figure 6
5V
10 V
15 V
CE to CP;
see Figure 6
5V
10 V
15 V
Min Typ Max Unit
-
60 120 ns
-
30 60 ns
-
20 40 ns
3
6-
MHz
7 14 -
MHz
9 18 -
MHz
95 45 -
ns
35 20 -
ns
25 15 -
ns
105 55 -
ns
45 25 -
ns
35 15 -
ns
120 60 -
ns
50 25 -
ns
40 20 -
ns
130 65 -
ns
45 20 -
ns
30 15 -
ns
150 75 -
ns
50 25 -
ns
30 15 -
ns
100 50 -
ns
50 25 -
ns
40 20 -
ns
250 125 -
ns
100 50 -
ns
75 35 -
ns
120 60 -
ns
40 20 -
ns
25 10 -
ns
+10 40 -
ns
+5 20 -
ns
0 20 -
ns
+35 90 -
ns
+15 35 -
ns
+15 25 -
ns
+20 40 -
ns
+5 15 -
ns
+5 10 -
ns
[1] The typical values of the propagation delay and transition times are calculated from the extrapolation formulas shown (CL in pF).
HEF4516B_6
Product data sheet
Rev. 06 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
9 of 16

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]