H7N0310LD(2002) Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
H7N0310LD Datasheet PDF : 14 Pages
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H7N0310LD, H7N0310LS, H7N0310LM
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
0.2
I D = 20 A
0.1
10 A
5A
0
4
8
12 16 20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
VGS = 5 V
10
10 V
5
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
40
Pulse Test
32
24
20 A
I D = 5 A, 10 A
16 V GS = 5 V
8
10 V
5 A, 10 A, 20 A
0
−40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = −25°C
10
75°C
25°C
3
1
0.3
0.1
0.1
V DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I D (A)
Rev.3, Aug. 2002, page 5 of 5
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