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GL24T-GS08 Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Fabricante
GL24T-GS08 Datasheet PDF : 6 Pages
1 2 3 4 5 6
www.vishay.com
GL05T to GL24T
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS GL05T
PARAMETER
TEST CONDITIONS
Peak pulse current
8/20 μs
Peak pulse power
8/20 μs waveform
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
TSTG
VALUE
17
300
±8
± 15
- 55 to + 125
- 55 to + 150
UNIT
A
W
kV
kV
°C
°C
ABSOLUTE MAXIMUM RATINGS GL12T
PARAMETER
TEST CONDITIONS
Peak pulse current
8/20 μs
Peak pulse power
8/20 μs waveform
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
TSTG
VALUE
12
300
±8
± 15
- 55 to + 125
- 55 to + 150
UNIT
A
W
kV
kV
°C
°C
ABSOLUTE MAXIMUM RATINGS GL15T
PARAMETER
TEST CONDITIONS
Peak pulse current
8/20 μs
Peak pulse power
8/20 μs waveform
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
TSTG
VALUE
10
300
±8
± 15
- 55 to + 125
- 55 to + 150
UNIT
A
W
kV
kV
°C
°C
ABSOLUTE MAXIMUM RATINGS GL24T
PARAMETER
TEST CONDITIONS
Peak pulse current
8/20 μs
Peak pulse power
8/20 μs waveform
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
TSTG
VALUE
5
300
±8
± 15
- 55 to + 125
- 55 to + 150
UNIT
A
W
kV
kV
°C
°C
ELECTRICAL CHARACTERISTICS GL05T
PARAMETER
TEST CONDITIONS/REMARKS
Protection paths
Number of lines which can be protected
Reverse stand-off voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
at IR = 1 μA
at VR = 5 V
at IR = 1 mA
at IPP = 1 A
at IPP = 5 A
at VR = 0 V; f = 1 MHz
SYMBOL
Nchannel
VRWM
IR
VBR
VC
CD
MIN.
-
-
-
6
-
-
-
TYP.
-
-
-
-
-
-
5
MAX.
-
5
20
-
9.8
11
-
UNIT
lines
V
μA
V
V
V
pF
Rev. 1.8, 09-Jun-11
2
Document Number: 85809
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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