GA200SA60SP Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Fabricante

GA200SA60SP

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier 

GA200SA60SP

250

200

150

Square wave:

60% of rated

volt ag e

100

For both:

Duty cycle: 50%

TJ = 125°C

Tsink = 90°C

Gate drive as specified

Power Dissipation = 140W

Triangular wave:

Clamp voltage:

80% of rated

50

Ideal diodes

0

A

0.1

1

10

100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

1000

TJ = 150 °C

100

TJ = 25 °C

10

VGE = 15V

20µs PULSE WIDTH

1

0.5

1.0

1.5

2.0

2.5

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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1000

100

TJ = 150 °C

TJ = 25 °C

VCC = 50V

5µs PULSE WIDTH

10

5

6

7

VGE, Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3

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