28F004BX-B Ver la hoja de datos (PDF) - Intel
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28F004BX-B Datasheet PDF : 50 Pages
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28F400BX-T B 28F004BX-T B
Table 1 Bus Operations for WORD-WIDE Mode (BYTE e VIH)
Mode
Notes RP
CE
OE
WE
A9 A0 VPP DQ0–15
Read
12
VIH
VIL
VIL
VIH
XX
X
DOUT
Output Disable
VIH
VIL
VIH
VIH
X
X
X
High Z
Standby
VIH
VIH
X
X
X
X
X
High Z
Deep Power-Down
9
VIL
X
X
X
X
X
X
High Z
Intelligent Identifier (Mfr)
34
VIH
VIL
VIL
VIH
VID VIL
X
0089H
Intelligent Identifier (Device) 3 4 5 VIH
VIL
VIL
VIH VID VIH X
4470H
4471H
Write
6 7 8 VIH
VIL
VIH
VIL
X
X
X
DIN
Table 2 Bus Operations for BYTE-WIDE Mode (BYTE e VIL)
Mode
Notes RP
Read
1 2 3 VIH
Output Disable
VIH
Standby
VIH
Deep Power-Down 9
VIL
Intelligent
Identifier (Mfr)
4
VIH
CE
VIL
VIL
VIH
X
VIL
OE
VIL
VIH
X
X
VIL
WE
VIH
VIH
X
X
VIH
A9 A0 Ab1 VPP
XX X X
XX X X
XX X X
XX X X
VID VIL X
X
Intelligent
45
VIH
VIL
VIL
VIH VID VIH X
X
Identifier (Device)
Write
6 7 8 VIH VIL VIH VIL X X
X
X
DQ0 – 7
DOUT
High Z
High Z
High Z
89H
70H
71H
DIN
DQ8 – 14
High Z
High Z
High Z
High Z
High Z
High Z
High Z
NOTES
1 Refer to DC Characteristics
2 X can be VL VIH for control pins and addresses VPPL or VPPH for VPP
3 See DC Characteristics for VPPL VPPH VHH VID voltages
4 Manufacturer and Device codes may also be accessed via a CUI write sequence A1 – A17 e X
5 Device ID e 4470H for 28F400BX-T and 4471H for 28F400BX-B
6 Refer to Table 4 for valid DIN during a write operation
7 Command writes for Block Erase or Word Byte Write are only executed when VPP e VPPH
8 To write or erase the boot block hold RP at VHH
9 RP must be at GND g0 2V to meet the 1 2 mA maximum deep power-down current
17
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