2. Transformer
EE2229
1
9, 10
Np/2 2
Np/2 3
6, 7 N5V
Na 4
5
FSQ0x70RNA Rev. 1.00
Figure 22. Transformer Schematic Diagram
3. Winding Specification
Pin (S → F)
Np/2
3→2
Insulation: Polyester Tape t = 0.025mm, 1 Layers
Na
4→5
Insulation: Polyester Tape t = 0.025mm, 2 Layers
N5V
6, 7 → 9, 10
Insulation: Polyester Tape t = 0.025mm, 2 Layers
Np/2
2→1
Insulation: Polyester Tape t = 0.025mm, 2 Layers
Wire
0.3ϕ × 1
0.25ϕ × 2
0.65ϕ × 2
0.3ϕ × 1
Turns
72
22
8
72
Winding Method
Solenoid winding
Solenoid winding
Solenoid winding
Solenoid winding
4. Electrical Characteristics
Pin
Inductance
1–3
Leakage
1–3
Specification
1.20mH ± 5%
< 30µH Max
Remark
100kHz, 1V
Short all other pins
5. Core & Bobbin
Core: EE2229 (Material: PL-7, Ae = 35.7 mm2)
Bobbin: BE2229
© 2006 Fairchild Semiconductor Corporation
FSQ0170RNA, FSQ0270RNA, FSQ0370RNA Rev. 1.0.2
13
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