UPD75P048GC-AB8 Ver la hoja de datos (PDF) - NEC => Renesas Technology

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UPD75P048GC-AB8

4-BIT SINGLE-CHIP MICROCOMPUTER

NEC => Renesas Technology 

µPD75P048

3. PROM (PROGRAM MEMORY) WRITE AND VERIFY

The µPD75P048 contains 8064 bytes of PROM. The following table shows the pin functions during the write

and verify cycles. Note that it is not necessary to enter an address, because the address is updated by pulsing

the X1 clock pins.

Pin Name

VPP

X1, X2

MD0 - MD3 (P30 - P33)

P40 - P43 (lower 4 bits)

P50 - P53 (higher 4 bits)

VDD

Function

Normally 2.7 to 6 V; 12.5 V is applied during write/verify

After a write/verify write, the X1 and X2 clock pins are

pulsed. The inverted signal of the X1 should be input to the

X2.

Note that these pins are also pulsed during a read.

Operation mode selection pins.

8-bit data input/output pins for write and verify

Supply voltage.

Normally 2.7 to 6 V; 6 V is applied during write/verify

Caution The µPD75P048CW/GC do not have a UV erase window, thus the PROM contents cannot be erased

with ultra-violet ray.

3.1 PROM WRITE AND VERIFY OPERATION MODE

When 6 V and 12.5 V are applied to the VDD and VPP pins, respectively, the PROM is placed in the write/verify

mode. The operation is selected by the MD0 to MD3 pins, as shown in the table.

The other pins should be returned to VSS potential via pull-down resistors.

VPP

+12.5 V

Operation Mode Specification

VDD

MD0

MD1

MD2

+6 V

H

L

H

L

H

H

L

L

H

H

×

H

MD3

L

H

H

H

Operation Mode

Clear program memory address to 0

Write mode

Verify mode

Program inhibit

×: Don’t care.

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