FSD200M Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FSD200M Datasheet PDF : 18 Pages
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FSD210, FSD200
Electrical Characteristics
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
Sense FET SECTION
Drain-Source Breakdown Voltage
BVDSS VCC = 0V, ID = 100µA
700
-
-
V
Startup Voltage (Vstr) Breakdown
BVSTR
700
-
-
V
Off-State Current
On-State Resistance
IDSS VDS = 560V
-
-
100 µA
Tj = 25°C, ID = 25mA
-
28 32
Ω
RDS(ON)
Tj = 100°C, ID = 25mA
-
42 48
Ω
Rise Time
TR
VDS = 325V, ID = 50mA -
100
-
ns
Fall Time
TF
VDS = 325V, lD = 25mA
-
50
-
ns
CONTROL SECTION
Output Frequency
Output Frequency Modulation
FOSC
FMOD
Tj = 25°C
Tj = 25°C
126 134 142 kHz
-
±4
-
kHz
Feedback Source Current
IFB
Vfb = 0V
0.22 0.25 0.28 mA
Maximum Duty Cycle
DMAX Vfb = 3.5V
60 65 70
%
Minimum Duty Cycle
DMIN Vfb = 0V
0
0
0
%
UVLO Threshold Voltage (FSD200)
VSTART
VSTOP
After turn on
6.3
7
7.7
V
5.3
6
6.7
V
UVLO Threshold Voltage (FSD210)
VSTART
VSTOP
After turn on
8.0 8.7 9.4
V
6.0 6.7 7.4
V
Supply Shunt Regulator (FSD200)
VCCREG
-
-
7
-
V
Internal Soft Start Time
TS/S
-
3
-
ms
BURST MODE SECTION
Burst Mode Voltage
VBURH
VBURL
Tj = 25°C
0.58 0.64 0.7
V
0.5 0.58 0.64 V
Hysteresis
-
60
-
mV
PROTECTION SECTION
Drain to Source Peak Current Limit
Current Limit Delay(1)
Thermal Shutdown Temperature (Tj)(1)
IOVER
TCLD
TSD
Tj = 25°C
0.275 0.320 0.365 A
-
220
-
ns
125 145 160 °C
Shutdown Feedback Voltage
Feedback Shutdown Delay Current
Leading Edge Blanking Time(2)
VSD
IDELAY
TLEB
-
Vfb = 4.0V
3.5 4.0 4.5
V
3
5
7
µA
200
-
-
ns
TOTAL DEVICE SECTION
Operating Supply Current (FSD200)
Operating Supply Current (FSD210)
IOP
Vcc = 7V
IOP
Vcc = 11V
-
600
-
µA
-
700
-
µA
Start Up Current (FSD200)
ISTART Vcc = 0V
-
1
1.2 mA
Start Up Current (FSD210)
ISTART Vcc = 0V
-
700 900 µA
Vstr Supply Voltage
Vcc = 0V
20
-
-
V
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. This parameter is derived from characterization
5
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