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FQP10N60CF Datasheet PDF : 10 Pages
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FQP10N60CF / FQPF10N60CF
600V N-Channel MOSFET
February 2007
FRFET TM
Features
• 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
D
GDS
TO-220
FQP Series
GD S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
TO-220F
FQPF Series
S
FQP10N60CF FQPF10N60CF
600
9.0
9.0 *
5.7
5.7 *
36
36 *
± 30
583
9.0
16.9
4.5
169
50
1.35
0.4
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FQP10N60CF FQPF10N60CF
0.74
2.5
62.5
62.5
Units
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
1
FQP10N60CF / FQPF10N60CF Rev. A
www.fairchildsemi.com
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