FDS4895C Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDS4895C Datasheet PDF : 8 Pages
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Typical Characteristics: Q1 (N-Channel)
20
VGS = 10V
16
7.0V
6.5V
12
6.0V
8
5.5V
4
0
0
0.5
1
1.5
2
2.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
VGS = 6.0V
4
6.5V
7.0V
8.0V
10V
8
12
16
20
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
ID = 5.5A
VGS = 10V
1.6
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.105
0.095
ID = 2.8A
0.085
0.075
0.065
TA = 125oC
0.055
0.045
0.035
TA = 25oC
0.025
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
VDS = 10V
25
20
TA = -55oC
25oC
125oC
15
10
5
0
3
4
5
6
7
8
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55 oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4895C Rev C(W)
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