Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
âBVDSS
âTJ
IDSS
DrainâSource Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS
GateâBody Leakage
VGS = 0 V,
ID = 1 mA
30
ID = 10 mA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
V
22
mV/°C
500 ”A
±100 nA
On Characteristics
VGS(th)
âVGS(th)
âTJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static DrainâSource
OnâResistance
gFS
Forward Transconductance
VDS = VGS,
ID = 1 mA
1
ID = 10 mA, Referenced to 25°C
VGS = 10 V, ID = 21 A
VGS = 4.5 V, ID = 19 A
VGS=10 V, ID =21 A, TJ=125°C
VDS = 10 V, ID = 21 A
1.7 3
V
â5
mV/°C
3.3 3.9 mâŠ
4.1 5.1
4.5 5.6
94
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
VGS = 15 mV, f = 1.0 MHz
3880
pF
1030
pF
310
pF
0.4 1.8 3.1
âŠ
Switching Characteristics (Note 2)
td(on)
TurnâOn Delay Time
tr
TurnâOn Rise Time
td(off)
TurnâOff Delay Time
tf
TurnâOff Fall Time
Qg(TOT)
Total Gate Charge at VGS=10V
Qg
Total Gate Charge at VGS=5V
Qgs
GateâSource Charge
Qgd
GateâDrain Charge
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 âŠ
VDS = 15 V,
ID = 21 A
12 22
ns
12 22
ns
60 96
ns
35 56
ns
58 81
nC
31 43
nC
11
nC
8
nC
DrainâSource Diode Characteristics and Maximum Ratings
VSD
DrainâSource Diode Forward Voltage VGS = 0 V, IS = 3.5 A (Note 2)
420 700 mV
trr
Diode Reverse Recovery Time
IF = 21 A,
32
ns
IRM
Diode Reverse Recovery Current
dIF/dt = 300 A/”s
(Note 3)
2.1
A
Qrr
Diode Reverse Recovery Charge
34
nC
Notes:
1. RΞJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RΞJC is guaranteed by design while RΞCA is determined by the user's board design.
a) 50°/W when
mounted on a 1 in2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300”s, Duty Cycle < 2.0%.
3. See âSyncFET Schottky body diode characteristicsâ below.
FDS6299S Rev C1 (W)