FDS6375 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDS6375 Datasheet PDF : 5 Pages
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Typical Characteristics
5
ID = -8A
4
VDS = -5V
3
-10V
-15V
2
1
0
0
6
12
18
24
30
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
R DS(ON) LIMIT
10
1
100µ
1ms
10ms
100ms
1s
10s
DC
VGS = -4.5V
0.1
SINGLE PULSE
RθJA = 125oC/W
TA = 25 oC
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
4000
3200
2400
C ISS
f = 1 MHz
VGS = 0 V
1600
800
COSS
CRSS
0
0
5
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA = 125°C/W
TA = 25°C
30
20
10
0
0.001
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) + RθJA
RθJA = 125oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/ t2
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6375 Rev E(W)
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