FDS6064N7 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDS6064N7 Datasheet PDF : 6 Pages
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Typical Characteristics
100
VGS = 4.5V
2.5V
80
2.0V
1.8V
1.5V
60
40
20
0
0.0
0.5
1.0
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
ID = 23A
VGS = 4.5V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
withTemperature.
80
VDS = 5V
60
40
TA =125oC
20
25oC
-55oC
0
0.5
0.7
0.9
1.1
1.3
1.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.4
2.2
VGS = 1.5V
2
1.8
1.6
1.8V
1.4
2.0V
1.2
2.5V
3.0V
1
4.5V
0.8
0
20
40
60
80
100
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.009
0.007
ID = 11.5A
0.005
TA = 125oC
0.003
TA = 25oC
0.001
1
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
TA = 125oC
1
0.1
25oC
0.01
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6064N7 Rev D2 (W)
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