FCX1053ATA Ver la hoja de datos (PDF) - Zetex => Diodes

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Fabricante

FCX1053ATA

SOT89 NPN medium power transistor

Zetex => Diodes 

FCX1053A

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol Min. Typ. Max. Unit Conditions

Collector-base

breakdown voltage

V(BR)CBO 150 250

V IC = 100␮A

Collector-emitter

breakdown voltage

VCES

150 250

V IC = 100␮A

Collector-emitter

breakdown voltage

VCEO

75 100

V IC = 10mA

Collector-emitter

breakdown voltage

VCEV

150 250

V IC = 100␮A, VEB = 1V

Emitter-base breakdown V(BR)EBO 5

8.8

voltage

V IE = 100␮A

Collector cut-off current ICBO

0.9

10

nA VCB = 120V

Emitter cut-off current IEBO

0.3

10

nA VEB = 4V

Collector-emitter cut-off ICES

current

1.5

10

nA VCES = 120V

Collector-emitter

saturation voltage

VCE(sat)

21

30

mV IC = 0.2A, IB = 20mA (*)

55

75

mV IC = 0.5A, IB = 20mA(*)

150 200 mV IC = 1A, IB = 10mA(*)

160 210 mV IC = 2A, IB = 100mA(*)

350 440 mV IC = 4.5A, IB = 200mA(*)

Base-emitter saturation VBE(sat)

voltage

900 1000 mV IC = 3A, IB = 100mA(*)

Base-emitter turn-on

voltage

VBE(on)

825 950 mV IC = 3A, VCE = 2V(*)

Static forward current hFE

transfer ratio

270 440

300 450 1200

IC = 10mA, VCE = 2V(*)

IC = 0.5A, VCE = 2V(*)

300 450

IC = 1A, VCE = 2V(*)

40

60

IC = 4.5A, VCE = 2V(*)

20

IC = 10A, VCE = 2V(*)

Switching times

ton

162

ns IC = 2A, IB1 = IB2 = Ϯ20mA,

VCC = 50V

toff

900

ns IC = 2A, IB1 = IB2 = Ϯ20mA,

VCC = 50V

Transition frequency

fT

140

MHz IC = 50mA, VCE = 10V,

f = 100MHz

Output capacitance

COBO

21

30

pF VCB = 10V, f = 1MHz

NOTES:

(*) Measured under pulsed conditions. Pulse width = 300␮s. Duty Յ2%.

Issue 2 - July 2006

4

© Zetex Semiconductors plc 2006

www.zetex.com

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