EMIF01-1003M3 Ver la hoja de datos (PDF) - STMicroelectronics
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EMIF01-1003M3 Datasheet PDF : 11 Pages
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Characteristics
1
Characteristics
EMIF01-1003M3
Table 1.
Symbol
Absolute ratings (limiting values at Tamb = 25° C unless otherwise specified)
Parameter
Value
Unit
VPP
ESD discharge IEC 61000-4-2 air discharge on input and output pins
ESD discharge IEC 61000-4-2 contact discharge on input and output pins
Tj Junction temperature
Top Operating temperature range
Tstg Storage temperature range
15
8
kV
125
°C
-40 to + 85 °C
-55 to +150 °C
Figure 3. Electrical characteristics (definitions)
I
Symbol
VBR
=
IRM
=
VRM
=
VCL
=
RD
=
IPP
=
IR
=
Cline
=
FO
=
Parameter
Breakdown voltage
Leakage current @ VRM
Stand-off voltage
Clamping voltage
Dynamic resistance
Peak pulse current
Breakdown current
Line capacitance
Cut-off frequency
IF
VF
VCL VBR VRM
IRM
V
IR
IPP
Table 2.
Symbol
Electrical characteristics (Tamb = 25° C)
Test conditions
VBR
IRM
RI/O
Cline
S21
IR = 1 mA
VRM = 3 V per line
Tolerance ± 10%
VR= 0 VDC, VOSC = 30 mV, F = 1 MHz
F = 900 MHz
Min. Typ. Max. Unit
5
6.5
8
V
100
nA
100
Ω
30
39
pF
-25
dB
2/11
Doc ID 13976 Rev 2
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