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EMIF01-1003M3(2007) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
EMIF01-1003M3
(Rev.:2007)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
EMIF01-1003M3 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Characteristics
1
Characteristics
EMIF01-1003M3
Table 1.
Symbol
Absolute ratings (limiting values at Tamb = 25° C unless otherwise specified)
Parameter
Value
Unit
VPP
ESD discharge IEC61000-4-2 air discharge on input and output pins
ESD discharge IEC61000-4-2 contact discharge on input and output pins
15
8
kV
Tj
Junction temperature
Top Operating temperature range
Tstg Storage temperature range
125
°C
-40 to + 85
°C
-55 to +150
°C
Table 2.
Symbol
Electrical characteristics (Tamb = 25° C)
Parameter
VBR
IRM
VRM
VCL
Rd
IPP
RI/O
Cline
Breakdown voltage
Leakage current @ VRM
Stand-off voltage
Clamping voltage
Dynamic resistance
Peak pulse current
Series resistance between Input & Output
Input capacitance per line
Symbol
Test conditions
VBR
IRM
RI/O
Cline
S21
IR = 1 mA
VRM = 3 V per line
Tolerance ± 10%
VR= 0 VDC, VOSC = 30 mV, F = 1 MHz
F = 900 MHz
I
IF
VBR
VCL
VRM
VF
IRM
IR
Min.
5
IPP
Typ.
6.5
100
30
Max.
8
100
39
-25
V
Unit
V
nA
Ω
pF
dB
2/10

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