DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

EDS2516APTA Ver la hoja de datos (PDF) - Elpida Memory, Inc

Número de pieza
componentes Descripción
Fabricante
EDS2516APTA
Elpida
Elpida Memory, Inc Elpida
EDS2516APTA Datasheet PDF : 53 Pages
First Prev 21 22 23 24 25 26 27 28 29 30 Next Last
EDS2516APTA
Current state
/CS /RAS /CAS /WE Address
Command
Operation
Mode register set
H
×
×
×
×
DESL
NOP
L
H
H
H
×
NOP
NOP
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10 READ/READA
ILLEGAL*4
L
H
L
L
BA, CA, A10 WRIT/WRITA
ILLEGAL*4
L
L
H
H
BA, RA
ACT
Bank and row active*9
L
L
H
L
BA, A10
L
L
L
H
×
L
L
L
L
MODE
PRE, PALL
REF, SELF
MRS
NOP
Refresh*9
Mode register set*8
ERemark: H: VIH. L: VIL. ×: VIH or VIL
Notes: 1.An interval of tDPL is required between the final valid data input and the precharge command.
2. If tRRD is not satisfied, this operation is illegal.
3. Illegal for same bank, except for another bank.
O4. Illegal for all banks.
5. NOP for same bank, except for another bank.
6. Illegal if tRCD is not satisfied.
L7. Illegal if tRAS is not satisfied.
8. MRS command must be issued after DOUT finished, in case of DOUT remaining.
Product 9. Illegal if lMRD is not satisfied.
Data Sheet E0359E20 (Ver. 2.0)
21

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]