DTD114E Ver la hoja de datos (PDF) - Unisonic Technologies

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DTD114E

NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)

Unisonic Technologies 

DTD114E

NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless others specified)

PARAMETER

SYMBOL

RATING

UNIT

Supply Voltage

VCC

50

V

Input Voltage

Output Current

VIN

-10~+40

V

IOUT

500

mA

Power Dissipation

Junction Temperature

PD

200

mW

TJ

+150

C

Storage Temperature

TSTG

-40 ~ +150

C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL SPECIFICATIONS (TA=25°C, unless others specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Input Voltage

VIN(OFF)

VIN(ON)

VCC =5V, IOUT =100μA

VOUT =0.3V, IOUT =10mA

3

0.5

V

Output Voltage

VOUT(ON) IOUT/IIN =50mA/2.5mA

0.1 0.3

V

Input Current

IIN

VIN=5V

0.88 mA

Output Current

IOUT(OFF) VCC =50V, VIN =0V

0.5 μA

DC Current Gain

hFE

VOUT =5V, IOUT =50mA

56

Input Resistance

R1

7

10

13

kΩ

Resistance Ratio

R2/R1

0.8

1

1.2

Transition Frequency

fT

VCE =10V, IE =−50mA, f=100MHz

200

MHz

Note: Transition frequency of the device.

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R206-043.D

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