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DTA123Y

DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS)

Unisonic Technologies 

DTA123Y

PNP SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

-50

V

Input Voltage

Output Current

Power Dissipation

VIN

IOUT

IC(MAX)

PD

-12 ~ +10

V

-100

-100

mA

200

mW

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL SPECIFICATIONS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

Input Voltage

VIN(OFF)

VIN(ON)

Output Voltage

Input Current

VOUT(ON)

IIN

Output Current

DC Current Gain

IOUT(OFF)

GIN

Input Resistance

Resistance Ratio

R1

R2/R1

Transition Frequency

fT

Note: Transition frequency of the device

TEST CONDITIONS

VCC =-5V, IOUT =-100μA

VOUT =-0.3V, IOUT =-20mA

IOUT/IIN =-10mA/-0.5mA

VIN=-5V

VCC =-50V, VIN =0V

VOUT =-5V, IOUT =-10mA

VCE =-10V, IE =−5mA, f=100MHz (Note)

MIN

-3

33

1.54

3.6

TYP

2.2

4.5

250

MAX UNIT

-0.3

V

-0.3 V

-3.8 mA

-0.5 μA

2.86 KΩ

5.5

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R206-070.C

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