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DTA113T

PNP SILICON TRANSISTOR

Unisonic Technologies 

DTA113T

PNP SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-50

V

Emitter-Base Voltage

VEBO

-6

V

Collector Current

IC

-100

mA

Peak Collector Current

ICM

-200

mA

Collector Power Dissipation

PC

150

mW

Junction Temperature

TJ

150

°C

Storage Temperature

TSTG

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)

PARAMETER

Collector-Emitter Breakdown Voltage

Collector-Emitter Saturation Voltage

Collector Cut-off Current

DC Current Gain

Input Resistance

Current Gain Bandwidth Product

SYMBOL

TEST CONDITIONS

BVCEO IC=-100μA, RBE=∞

VCE(SAT) IC=-10mA, IB=-0.5mA

ICBO VCB=-50V, IE=0

hFE VCE=-5V, IC=-1mA

RIN

fT

VCE=-6V, IE=10mA

MIN TYP MAX UNIT

-50

V

-0.3 V

-0.1 μA

100

0.7 1.0 1.3 kΩ

150

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R206-091.D

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