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DS2229

Word-Wide 8 Meg SRAM Stik

Dallas Semiconductor -> Maxim Integrated 

www.dalsemi.com

DS2229

Word-Wide 8 Meg SRAM Stik

FEATURES

Organized as a high density 512k x 16 bit

StikTM

Fast access time of 85 ns

Unlimited write cycles

Employs popular JEDEC standard 80-position

SIMM connector

Full ±10% operating range

Read cycle time equals write cycle time

Ultra-low standby current < 10 µA

Suitable for battery-backed applications

PIN ASSIGNMENT

DESCRIPTION

80-PIN SIP STIK

The DS2229 is an 8,388,608-bit low-power fully static Random Access Memory organized as a 524,888

word by 16 bits using CMOS technology. The device employs the popular JEDEC standard 80-pin SIMM

connection scheme with no additional circuitry required. The device operates from a single power supply

with a voltage input of 4.5 to 5.5 volts. The Chip Enable inputs ( CE0 , CE1 , CE2 , CE3 ) are used for

device selection and can be used in order to achieve the minimum standby current mode which facilitates

battery backup. The device provides a fast access time of 85 ns. The DS2229 maintains TTL levels over

input voltage range 4.5V to 5.5V. The DS2229 is JEDEC pin compatible (see Figure 1) with flash

EEPROM memory SIMM boards of similar density.

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