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DG9461DV Ver la hoja de datos (PDF) - Vishay Semiconductors

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componentes Descripción
Fabricante
DG9461DV
Vishay
Vishay Semiconductors Vishay
DG9461DV Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
DG9461
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +13 V
IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "20 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "40 mA
(Pulsed at 1ms, 10% duty cycle)
ESD (Method 3015.7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . > 2000 V
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125°C
Power Dissipation (Packages)b
8-Pin Narrow Body SOICc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/_C above 75_C
SPECIFICATIONS (V+ = 3 V)
Parameter
Analog Switch
Analog Signal Ranged
Drain-Source On-Resistance
rDS(on) Matchd
rDS(on) Flatnessf
NO or NC Off Leakage Current g
COM Off Leakage Current g
Channel-On Leakage Current g
Digital Control
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
Off-Isolation
Source-Off Capacitance
Channel-On Capacitance
Power Supply
Power Supply Range
Power Supply Current
Symbol
VANALOG
rDS(on)
DrDS(on)
rDS(on)
Flatness
INO/NC(off)
ICOM(off)
ICOM(on)
IINL or IINH
tON
tOFF
td
QINJ
OIRR
CS(off)
CD(on)
V+
I+
Test Conditions
Otherwise Unless Specified
V+ = 3 V, "10%, VIN = 0.8 or 2.4 Ve
VNO or VNC = 1.5 V, V+ = 2.7 V
ICOM = 5 mA
VNO or VNC = 1.5 V
VNO or VNC = 1 and 2 V
VNO or VNC = 1 V / 2 V, VCOM = 2 V / 1 V
VCOM = 1 V / 2 V, VNO or VNC = 2 V / 1 V
VCOM = VNO or VNC = 1 V / 2 V
VNO or VNC = 1.5 V
CL = 1 nF, Vgen = 0 V, Rgen = 0 W
RL = 50 W, CL = 5 pF, f = 1 MHz
f = 1 MHz
V+ = 3.3 V, VIN = 0 or 3.3 V
Tempa
D Suffix
–40 to 85_C
Minc Typb Maxc
Full
0
Room
50
Full
Room
0.4
Room
4
Room
-100
5
Full
–5000
Room
-100
5
Full
–5000
Room
-200
10
Full
–10000
3
80
140
2
8
100
5000
100
5000
200
10000
Full
1
Room
Full
Room
Full
Room
3
Room
Room
Room
Room
50
120
200
20
50
120
20
1
5
–74
7
32
2.7
12
1
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Difference of min and max values.
g. Guraranteed by 5-V leakage testing, not production tested..
Unit
V
W
pA
mA
ns
pC
dB
pF
V
mA
www.vishay.com S FaxBack 408-970-5600
4-2
Document Number: 70832
S-63597—Rev. B, 26-Jul-99

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