DG2011(2005) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
DG2011
(Rev.:2005)
(Rev.:2005)
Vishay Semiconductors
DG2011 Datasheet PDF : 7 Pages
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DG2011
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Temperature and Supply Voltage
90
80
tON V+ = 2 V
70
60
tON V+ = 3 V
50
40
tOFF V+ = 2 V
30
20
tOFF V+ = 3 V
tON V+ = 5 V
tOFF V+ = 5 V
10
0
−60 −40 −20 0
20 40 60
Temperature (_C)
80 100
Insertion Loss, Off-Isolation, Crosstalk
vs. Frequency
10
0
LOSS
−10
−20
−30
−40
−50
XTALK
−60
OIRR
−70
−80
−90
100 K
V+ = 5.0 V
RL = 50 W
1M
10 M
100 M
1G
Frequency (Hz)
Switching Threshold vs. Supply Voltage
3.0
Charge Injection vs. Analog Voltage
30
2.5
2.0
1.5
1.0
ÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍ
0.5
20
V+ = 2 V
10
0
−10
−20
V+ = 5 V
V+ = 3 V
0.0
0
1
2
3
4
5
6
7
V+ − Supply Voltage (V)
−30
0
1
2
3
4
5
6
VCOM − Analog Voltage (V)
Document Number: 70102
S-50509—Rev. E, 21-Mar-05
www.vishay.com
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