Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Número de pieza
componentes Descripción
DFM200PXM33-A000(2001) Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DFM200PXM33-A000
(Rev.:2001)
Fast Recovery Diode Module
Dynex Semiconductor
DFM200PXM33-A000 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
DFM200PXM33-A000
STATIC ELECTRICAL CHARACTERISTICS
T
vj
= 25˚C unless stated otherwise.
Symbol
Parameter
Test Conditions
I
RM
Peak reverse current
V
Forward voltage
F
L
Inductance
V
R
= 3300V, T
vj
= 125˚C
I
F
= 200A
I
F
= 200A, T
vj
= 125˚C
-
DYNAMIC ELECTRICAL CHARACTERISTICS
T
vj
= 25˚C unless stated otherwise.
Symbol
Parameter
I
rr
Reverse recovery current
Q
rr
Reverse recovery charge
E
Reverse recovery energy
rec
Test Conditions
I = 200A,
F
dI
F
/dt = 1100A/
µ
s,
V
R
= 1800V
T
vj
= 125˚C unless stated otherwise.
Symbol
Parameter
I
rr
Reverse recovery current
Q
Reverse recovery charge
rr
E
rec
Reverse recovery energy
Test Conditions
I
F
= 200A,
dI
F
/dt = 1000A/
µ
s,
V
R
= 1800V
Min. Typ. Max. Units
-
-
15 mA
-
2.5
-
V
-
2.5
-
V
-
30
-
nH
Min.
-
-
-
Typ.
165
115
130
Max. Units
-
A
-
µ
C
-
mJ
Min. Typ. Max. Units
-
185
-
A
-
190
-
µ
C
-
220
-
mJ
3/7
www.dynexsemi.com
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]