M59DR032BN Ver la hoja de datos (PDF) - STMicroelectronics

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Fabricante

M59DR032BN

32 Mbit (2Mb x16, Dual Bank, Page) Low Voltage Flash Memory

STMicroelectronics 

Table 28. Data Polling and Toggle Bits AC Characteristics (1)

(TA = 0 to 70 °C or –40 to 85 °C; VDD = VDDQ = 1.65V to 2.2V)

Symbol

Parameter

tWHQ7V

Write Enable High to DQ7 Valid (Program, W Controlled)

Write Enable High to DQ7 Valid (Block Erase, W Controlled)

tEHQ7V

Chip Enable High to DQ7 Valid (Program, E Controlled)

Chip Enable High to DQ7 Valid (Block Erase, E Controlled)

tQ7VQV

Q7 Valid to Output Valid (Data Polling)

tWHQV

Write Enable High to Output Valid (Program)

Write Enable High to Output Valid (Block Erase)

tEHQV

Chip Enable High to Output Valid (Program)

Chip Enable High to Output Valid (Block Erase)

Note: 1. All other timings are defined in Read AC Characteristics table.

M59DR032A, M59DR032B

M59DR032

Unit

Min

Max

10

200

µs

1.0

10

sec

10

200

µs

1.0

10

sec

0

ns

10

200

µs

1.0

10

sec

10

200

µs

1.0

10

sec

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