Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Número de pieza
componentes Descripción
M36W432BG Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
M36W432BG
32 Mbit (2Mb x16, Boot Block) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product
STMicroelectronics
M36W432BG Datasheet PDF : 66 Pages
First
Prev
21
22
23
24
25
26
27
28
29
30
Next
Last
M36W432TG, M36W432BG
Table 15. Flash Program, Erase Times and Program/Erase Endurance Cycles
Parameter
Test Conditions
Flash Device
Min
Typ
Max
Unit
Word Program
V
PPF
= V
DDF
10
200
µs
Double Word Program
V
PPF
= 12V ±5%
10
200
µs
Quadruple Word Program
V
PPF
= 12V ±5%
10
200
µs
Main Block Program
V
PPF
= 12V ±5%
V
PPF
= V
DDF
0.16/0.08
(1)
5
s
0.32
5
s
Parameter Block Program
V
PPF
= 12V ±5%
V
PPF
= V
DDF
0.02/0.01
(1)
4
s
0.04
4
s
Main Block Erase
V
PPF
= 12V ±5%
V
PPF
= V
DD
V
DDF
1
10
s
1
10
s
Parameter Block Erase
V
PPF
= 12V ±5%
V
PPF
= V
DDF
0.4
10
s
0.4
10
s
Program/Erase Cycles (per Block)
100,000
cycles
Note: 1. Typical time to program a Main or Parameter Block using the Double Word Program and the Quadruple Word Program commands
respectively.
28/66
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]